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| inchange semiconductor product specification silicon npn power transistors 2SC1309 description with to-3 package high voltage ,high speed applications for tv vertical deflection output applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1200 v v ceo collector-emitter voltage open base 500 v v ebo emitter-base voltage open collector 6 v i c collector current 5 a p t total power dissipation t c =25 80 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC1309 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma; i b =0 500 v v (br)ebo emitter-base breakdown votage i e =1.0ma; i c =0 5 v v cesat collector-emitter saturation voltage i c =5 a;i b =1.2 a 10 v v besat base-emitter saturation voltage i c =5 a;i b =1.2 a 2 v i cbo collector cut-off current v cb =1200v;i e =0 1.0 ma i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma h fe dc current gain i c =5a ; v ce =10v 10 inchange semiconductor product specification 3 silicon npn power transistors 2SC1309 package outline fig.2 outline dimensions |
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